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		A 0.4-Um 3.3-V 1t1c 4-Mb Nonvolatile Ferroelectric Ram with Fixed Bitline Reference Voltage Scheme and Data Protection Circuit by Jeon, byung-Gil Choi, Mun-Kyu Source: IEEE Journal of Solid-State Circuits Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Electronic Switching in Phase-Change Memories by Pirovano, A Lacaita, andrea L Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Investigation of Ultralow Leakage in Mos Capacitors on 4h Sic by Cheong, Kuan Yew Dimitrijev, Sima Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Novel Monos-Typenonvolatile Memory Using High- Dielectric for Improved Data Retention and Programming Speed by Xuguang, Wang Liu, J Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Low-Field Amorphous State Resistance and Tyhreshold Voltage Drift in Chalcogenide Materials by Pirovano, A Lacaita, andrea L Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Pulsed Tunnel Programming of Nonvolatile Memories by Irrera, I Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A 0.25-Um 3.0-V Itic 32-Mb Nonvolatile Ferroelectric Ram with Address Transition Detector and Current for cing Latch Sense Amplifier Scheme by Choi, M Jeon, Byung-Gil Source: Ieee Journal of Solid-State Circuits Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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