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		Mos Transistor Modeling for Rf Ic Design by Enz, Christian C Cheng, Yuhua Source: IEEE Journal of Solid-State Circuits Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Junction Leakage Characteristics in Modified Locos Isolation Structures with a Nitride Spacer by Jang, Se-Aug Yeo, In-Seok Kim, Young-Bog Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Post-Stress Trap Generation Induced by Oxide-Field Stress with Fn Injection by Chen, T.P li, Stelia Fung, S Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Model for Drain Current of Deep Submicrometer Mosfet'S Including Electron-Velocity Overshoot by Roldan, J B Gamiz, F Carcelier, J. E Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Effects Ofthermal Processes After Silicidation onPerformance of Tisi2 /Polysilicon Gate Device by Jang, Se-Aug Kim, Tae-Kyun Lee, S.K Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Successive Oxide Breakdown Statistics Correlation Effects, Reliability Methodologies and Their Limits by Sune, Jordi Wu, Ernest Y Lai, Wing L Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Improved Direct Determination of Mosfet Saturation Voltage Using Fourier Techniques by Picos, R Roca, Miquel Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Theory and Experiment of Suppressed Shot Noise in Stress-Induced Leakage Currents by Crupi, Felice Neri, Bruno Lombardo, Salvatore Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Interface Structure of Ultrathin Oxide Prepared By N2o Oxidation by Wong, Hei Poon, Vincent M C Chan, P J Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Strained-Si on Si----Ge Mosfet Mobility Model by Roldan, J B Gamiz, F Roldan, A Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Trends InUltimate Breakdown Strength of High Dielectric-Constant Materials by Mcpherson, Joe W Kim, Jinyoung Shanware, Ajit Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Performance Advantages of Schottky Source/Drain in Ultrathin-Body Silicon-on-Insulator and Dual-Gate Cmos by Connelly, Daniel Faulkner, Carl Grupp, D E Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		An Analytical Model for Flat-Band Polysilicon Quantization in Mos Devices by Spinelli, A. S Clerc, R Ghibaudo, G Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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