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		0. 18- Cmos 10-Gb/S Multiplexer/Demultiplexer Ics Using Current Mode Logic with Tolerance to Threshold Voltage Fluctuation by Tanabe, Akira Fujiwara, Ikuo Ogura, Takeshi Source: IEEE Journal of Solid-State Circuits Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		High-Performance Deep Submicron Cmos Technologies with Polycrystalilne-Sige Gates by Ponomarev, Youri V Stolk, Peter A Salm, Cora Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Advanced Thin-Film Silicon -on-Sapphire Technology Microwave Circuit Applications by Johnson, Robb A Houssaye, Paul R. De Ia Lagnado, Isaac Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Electrical Characteristics of Orientation Cmosfet with Source Drain Fabricated by Various Ion -Implantation Methods by Matsuda, T Okina, Mika Ohzone, Takashi Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Thin Silicide Development for Fuliy-Depleted Soi Cmos Technology by liu, Harvey I Burns, James A Wyatt, Peter W Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Influence of Asymmetric/Symmetric Source /Drain Region on Asymmetry and Mismatch of Cmosfet'S and Circuit Performance by Ohzone, Takashi Miyakawa, Tetsu Yabu, Toshiki Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Effect of Floating-Body Charge on Soi Mosfet Design by Wei, andy Sherony, Melanie J Antoniadis, Dimitri A Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Bias-Temperature Instabilities of Polysilicon Gate Hfo2 Mosfets by Han, Jeong Choi, Rino Nieh, Renee E Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Recoiled-Oxygen-Free Processing for 1.5 Nm Sion Gate-Dielectric in Sub-100-Nm Cmos Technology by togo, M Kimura, S Mogami, T Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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