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		Theoretical Study of Deep-Trap-Assisted Anomalous Currents in Worst-Bit Celis of Dynamic Random-Access Memories (Dram'S) by Yamaguchi, Ken Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Anomalous Junction Leakage Current Induced by Sti Dislocations its Impact on Dynamic Random Access Memory Devices by Ha, Daewon Cho, Changhyun Chung, Tae-Young Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Characterization of Process-Induced Mobile Ions onData Retention in Flash Memory by Liou, Jimmy Jih-Wei Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Theoretical and Experimental Investigation of Si Nanocrystal Memory Device with Hfo2 High-K Tunneling Dielectric by Lee, Jong Jin Wang, Xuguang Lu, Nan Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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