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		Soi High-Voltage Device with Step Thickness Sustained Voltage Layer by Lou, X Zhang, B Source: IET:Iee: Electronics Letters Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		High-Performance Germanium-Seeded Lateraliy Crystalilzed Tft'S for Vertical Device Integration by Subramanian, V SARaswat, Krishna C Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Study onDevice Characteristics of a Quasi-Soi Power Mosfet Fabricated by Reversed Silicon Wafer Direct Bonding by Matsumoto, Satohi Hiraoka, Kenji Sakai, Toshinori Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Floating Body Charge Monitoring Technique for Partially Depleted Soi Technology by Kuang, J B Chuang, C -T Saccamango, M J Source: International Journal of Electronics Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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