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Bicmos Variable Gain Transimpedance Amplifier for Automotive Applications by
  • De Ridder, T
  • Ossieur, P
Source: IET:Iee: Electronics Letters
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
A 2.5-V 45-Gb/S Decision Circuit Using Sige Bicmos Logic by
  • Dickson, Timothy O
  • Beerkens, Rudy
Source: IEEE Journal of Solid-State Circuits
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
A Variable Gain Rf Front-End, Based on a Voltage-Voltage Feedback Lna, for Multistandard Applications by
  • Rossi, Paolo
  • liscidini, Antonio
Source: IEEE Journal of Solid-State Circuits
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
High-Performance Rf Mixer and Operational Amplifier Bicmos Circuits Using Parasitic Vertical Bipolar Transistor in Cmos Technology by
  • Nam, IIku
  • Lee, Kwyro
Source: IEEE Journal of Solid-State Circuits
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Highly Integrated Direct Conversion Receiver for Gsm/Gprs/Edge with on-Chip 84-Db Dynamic Range Continuous-Time Adc by
  • Guiliou, Yann Le
  • Gaborieau, Olivier
Source: IEEE Journal of Solid-State Circuits
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
A 550-Ps Access 900-Mhz 1-Mb Ecl-Cmos Sram by
  • Nambu, Hiroaki
  • Kanetani, Kazuo
Source: IEEE Journal of Solid-State Circuits
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
A Si Bicmos Transimpedance Amplifier for 10-Gb/S Sonet Receiver by
  • Kim, Helen H
  • Burrus, Charles A
  • Bauman, Jon
Source: IEEE Journal of Solid-State Circuits
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Silicon-Germanium Bicmos Hbt Technology for Wireless Power Amplifier Applications by
  • Johnson, Jeffrey B
  • Sheridan, David C
  • Abasi, Fariborz
Source: IEEE Journal of Solid-State Circuits
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
An 0.3- Si Epitaxial Base Bicmos Technology with 37-Ghz and 10-Vbv for Rf Telecommunication by
  • NII, H
  • Yoshino, Chihiro
  • Inoh, Kazumi
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Power Reduction Techniques for a 1-Mb Ecl-Cmos Sram with an Access Time of 550 Ps and an Operating Frequency of 900 Mhz by
  • Ohhata, Kenichi
  • Arakawa, Fumihiko
Source: IEEE Journal of Solid-State Circuits
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
A Multiphase Pwm Converter Chip for Advanced Microprocessors by
  • Guo, Guoyong
  • Shi, Bingxue
Source: International Journal of Electronics
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Low-Power, High-Gain, and High-Linearity Sige Bicmos Wide-Band Low-Noise Amplifier by
  • He, Qiurong
  • Feng, Milton
Source: Ieee Journal of Solid-State Circuits
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
A Dual 10-B 200-Msps Pipelined D/A Convereter with Dll-Based Clock Synthesizer by
  • Manganaro, G
  • Kwak, Sung-Ung
Source: Ieee Journal of Solid-State Circuits
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
.2.2 Ghz All-N-P-N Second -Generation Controlled Conveyor in Pseudoclass Ab Using 0.8-Um Bicomos Technology by
  • Seguin, F
  • Godara, Lal C
Source: Ieee Transactions on Circuits and Systems-Ii: Express Briefs ( for merly: Analog & Digital Signal Processing)
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Saddleadd-on Metallization for Rf-Ic Technology by
  • Burghartz, Joachim N
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
2.2 Ghz All-N-P-N Second-Generation Controlled Conveyor in Pseudoclass Ab Using 0.8-Um Bicmos Technology by
  • Seguin, Fabrice
Source: Ieee Transactions on Circuits and Systems-Ii: Express Briefs ( for merly: Analog & Digital Signal Processing)
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Fully Integrated Wideband High-Current Rectifiers for Inductively Powered Devices by
  • Ghovanloo, Maysam
  • Najafi, Khalil
Source: Ieee Journal of Solid-State Circuits
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Characteristics of Low-Leakage Deep-Trench Diode for Esd Protection Design in 0.18-Um Sige Bicmos Process by
  • Chen, Jen-Kon
  • Chen, Shiao-Shien
  • Su, Jin-Lian
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
A 5-Ghz Bicmos Rfic Front-End for Ieee 802.11a/Hiperlan Wireless Lan by
  • Margarit, Mihai A
Source: Ieee Journal of Solid-State Circuits
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Product Applications and Technology Directions with Sige Bicmos by
  • Joseph, Alvin J
Source: Ieee Journal of Solid-State Circuits
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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