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		Simulation on Surface Tracking Pattern UsingDielectric Beealdown Model by Kim, Jun-Won Roh, Young-Su Source: Journal of Electrical Engineering and Technology Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Dielectric Breakdown Mechanism of Thin-Sio2 Studied byPost-Breakdown Resistance Statistics by Satake, Hideki Toriumi, Akira Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Soft Breakdon Conduction in Ultrathin (3-5 Nm) Gate Dielectrics by Miranda, Enrique Sune, Jordi Campabadal, Francesca Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		AssessingReliability of Silicon Nitride Capacitors in a Gaas Ic Process by Yeats, Bob Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A New Soft Breakdown Model for Thin Thermal Sio2 Films Under Constant Current Stress by Tomita, T Sakurai, T Taniguchi, Kenji Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Correlation Between Two Time-Dependent Dielectric Breakdown Measurements for Gate Oxides Damaged by Plama Processing by Eriguchi, Koji Kosaka, Yukiko Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Trapped Charge Distributions in Thin (10nm) Sio2 Films Subected to Static and Dynamic Stresses by Rodriguez, R Nafria, M Aymerich, X Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Simulation of Degradation of Dielectric Breakdown Field of Thermal Sio2 Films Due to Voids Si Wafers by Satoh, Yuhki Shiota, Takaaki Furuya, Hisashi Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Electrical Conduction and Dielectric Breakdown in Aluminum Oxide Insulators on Silicon by Kolodzey, James Chen, Shong-Chin Olowolafe, Johnson Olufemi Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Impact of Correlated Generation of Oxide Defects on Silc and Breakdown Distributions by Ielmini, Daniele Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Integration and Reliability of Cu-Sioc Interconnect for Arf/90-Nm Node Cmos Technology by Noguchi, Junji Oshima, Takayuki Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Hot-Hole-Induced Dielectric Breakdown in Ldmos Transistors by Labate, Lorenzo Manzini, Stefano Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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