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		Unidirectional Sensing Characteristics of Structured Au-Gan-Pt Diodes for Differential-Pair Hydrogen Sensors by Lo, Chieh Tan, Shih-Wei Source: International Journal of Hydrogen Energy Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Room Temperature Sensing Properties of Networked Gan Nanowire Sensors to Hydrogen Enhanced byGa2pd5 Nanodot Functionalization by Kim, Sang Sub Source: International Journal of Hydrogen Energy Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Hydrogen-Sensitive Sensor with Stabilized Pd-Mixture Forming Sensing Nanoparticles on an Interlayer by Tan, Shih-Wei Tsai, Jung-Shun Source: International Journal of Hydrogen Energy Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Characterization of Threading Dislocations in Gan Using Iow-Temperature Aqueous Koh Etching and Atomic for ce Microscopy by Datta, Han R Mahajan, S Bertram, R lindow, E Source: Scripta Materialia Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Comparison Betwee Wurtzite Phase and Zincblende Phase Gan Mesfet'S Using a Fuli Band Monte Carlo Simulation by Farahmand, Maziar Brennan, Kevin F Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Epitaxialiy-Grown Gan Junction Field Effect Transistors by Zhang, L Lester, L. F KhonSARi, M. M Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		High Coltage Gan Schottky Rectifiers by Dang, Chinh Ren, Fuji Wilson, Robert Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Fuli Band Monte Carlo Simulation of Zincblende Gan Mesfet'S Including Realistic Impact Ionizaation Rates by Farahmand, Maziar Brennan, Kevin F Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Characteristics of in Al 1-X N--Gan High-Electron Mobility Field-Effect Transistor by Katz, Oded Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Influence of Surface Defect Charge At Algan- Gan-Hemt Upon Schottky Gate Leakage Current and Breakdown Voltage by Saito, Waturu Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Dc,Rf, andmicrowave Noise Performance of Algan-Gan Field Transistors Dependence of Aluminum Concetration by Lu, Wu Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Photo-Cvd Sio2 Layers on Algan and Algan-Gan Moshfet by Chiou, Y Z Chang, S J Su, Y K Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		High Brighness Ingan Green Leds with An Ito on N -Sps Upper Contact by Wong, Hei Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Experimental and Theoritical Characterization ofSurface Acoustic Wave Propagation Properties of Gan Epitaxial Layers on C-Plane Sapphire by Marani, Marco Kim, Hyeong Joon Source: Journal of Materials Research Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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