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		Analytical Model for Output and Transfer Characteristics of Algan/Gan Based Hemt'S by Hanzaz, M Fadlo, S Cordier, Y Source: Journal of Active and Passive Electronic Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Carrier Transport Related Analysis of High-Power Algan/Gan Hemt Structures by Shah, P. B Smith, Doran D Jones, Kenneth A Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Solar Blind Hybrid lil-Nitride by Ruden, P. Paul Krishnankutty, Subash Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Dc,Rf, andmicrowave Noise Performance of Algan-Gan Field Transistors Dependence of Aluminum Concetration by Lu, Wu Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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