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		Analytical Threshold Voltage Modeling of Surrounding Gate Ksilicon Nanowire Transistors with Didfferent Geometries by Pabdian, M. Karthigai Balamurugan, N. B Source: Journal of Electrical Engineering and Technology Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Analog Circuit Synthesis with Constraint Generation of Layout-Dependent Effects by Geometric Programming by Zhang, Yu Chen, Gong li, Jing Dong, Qing Source: IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Experimental Investigation OfEffect of Channel Length on Performance and Water Accumulation in a Pemfc Paraliel Flow Field by Bachman, John Santamaria, Anthony D Tang, Hong-Yue Source: International Journal of Hydrogen Energy Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Device Scaling Effects on Hot-Carrier Induced Interface and Oxide-Trapped Charge Ditributions in Mosfet'S by Mahapatra, S Parikh, Chetan D Rao, R. M. V. G. K Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Cd Model for Asymmetric Trapezoidal Gate Mosfet'S in Trrong Inversion by Wong, S. C Cho, Shih-Keng Houng, Mau-Phon Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		An Analytical Drain Current Model of Short-Channel Mosfets Including Source/Drain Resistance Effect by Liou, J J Ho, C S Source: International Journal of Electronics Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Analytical Drain Thermal Noise Current Model Valid for Deep Submicron Mosfets by Han, Kwangseok Shin, Hyungcheol Source: Ieee Journal of Solid-State Circuits Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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