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Influence of Parasitic Parameters on Switching Characteristics and Layout Design Considerations of Sic Mosfets by
  • Qin, Haihong
  • Yan, Yangguang
  • Ma, Ceyu
  • Zhu, Ziyue
Source: Journal of Power Electronics: a Publication of Korean Institute of Power Electronics
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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Reduction of Parasitic Capacitance in Vertical Mosfets By Spacer Local Oxidation by
  • Kunz, V Dominik
  • Uchino, Takashi
  • Ashburn, Peter
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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