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Physically Based Modeling of Lowfield Electron Mobility in Ultrathin Single-and Double -Gate Soi N-Mosfets by
  • Esseni, D
  • Abramol, E
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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`Iv- Vi Compound Heterstructures Grown By Molecular Beam Epitav=Xy by
  • Ueta, A.Y
  • Abramol, E
  • Boschetti, C
  • Closs, H
Source: Microelectronics Journal
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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