A 0.24-Um 2.0-V 1t1mtj 16-Kb Nonvolatile Magnetoresistance Ram with Self-Reference Sensing Scheme

By: Material type: ArticleArticleDescription: 1906-1910 pSubject(s): In: Ieee Journal of Solid-State Circuits
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Articles Articles Periodical Section Vol.38, No.11 (Nov. 2003) Available