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		High Activity of B During Solid-Phase Epitaxy in A Pre-Amorphized Layer for med By Ge Ion Implantation and Deactivation During A Subsequent Thermal Process by Suzuki, Kunihiro Tashiro, H Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Estimating Lateral Straggling of Indium Implanted Into Crystalline Silicon by Suzuki, K Sudo, R Tashiro, H Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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