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A Statistical Model to PredictPerformance Variation of Polysilicon Tfts for med By Grain-Enhancement Technology by
  • Cheng, C.F
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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Modeling of Grain Growth Mechanism By Nickel Silicide Reactive Grain Boundary Effect in Metal-Induced-Lateral-Crystallization by
  • Cheng, C F
  • Chan, Mansun
  • Kok, C W
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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