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Analytical Drain Thermal Noise Current Model Valid for Deep Submicron Mosfets by
  • Han, Kwangseok
  • Shin, Hyungcheol
Source: Ieee Journal of Solid-State Circuits
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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An Rf Model ofAccumulation-Mode Mos Varactor Valid in Both Accumulation and Depletion Regions by
  • Song, Seong-Sik
  • Shin, Hyungcheol
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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