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Over-Erase Phenomenon in Sonos-Type Flash Memory and Its Minimisation Using A Hafnium Oxide Charge Storage Layer by
  • Tan, Y N
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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Over-Erase Phenomenon in Sonos-Type Flash Memory and Its Minimization Using A Hanium Oxide Charge Storage Layer by
  • Tan, Y N
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Request article
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