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In Situ Sin Passivation of Algan/Gan Hemts By Molecular Beam Epitaxy by
  • Smorchkova, I.P
Source: IET:IEE: Electronics Letters
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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Small Signal Rf Performance of Al Gan /Gan Heterojunction Bipolar Transistors by
  • Mc Carthy, L.S
  • Smorchkova, I.P
  • Fini, P
  • Rodwell, M.J.W
Source: IET:IEE: Electronics Letters
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Request article
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