Design onLow-Leakage Diode String for Using InPower-Rail Esd Clamp Circuits in a 0.35-Um Silicide Cmos Process

By: Material type: ArticleArticleDescription: 601-611 pSubject(s): In: IEEE Journal of Solid-State Circuits
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Articles Articles Periodical Section Vol.35, No.04 (Apr. 2000) Available