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		Effect of Colector Structure onFbsoa OfDielectricaliy-Isolated ligbt by Nagapudi, Venkatesh Sunkavalil, Ravishankar Baliga, B. J Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		The Dv/Dt Capability of Mos-Gated Thyistors. by Venkataraghavan, P Baliga, B. J Source: Ieee Transactions on PowerElectronics Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Modelingthe [Dv/Dt] ofIgbt During Inductive Turn off. by Ramamurthy, A Sawant, S Baliga, B.J Source: Ieee Transactions on PowerElectronics Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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