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Two-Dimensional Doping Profile Characterization of Mosfet'S by Inverse Modeling Using Characteristics InSubthreshold Region by
  • Lee, Zachary K
  • Mclirath, Michael B
  • Antoniadis, Dimitri A
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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Effect of Floating-Body Charge on Soi Mosfet Design by
  • Wei, andy
  • Sherony, Melanie J
  • Antoniadis, Dimitri A
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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