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Measurement of Mosfet Substrate Dopant Profile Via Inversion Layer-To-Substrate Capacitance by
  • Hsu, C. H
  • Chiang, Charles Yu-Teh
  • Yeow, Yew Tong
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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Influence of Interface Traps and Surface Mobility Degradation on Scanning Capacitance Microscopy Measurement by
  • Hong, Yang David
  • Yeow, Yew tong
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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