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		Osciliation Effects in Igbt''S Related to Negative Capacitance Phenomena by Omura, Ichiro Fichtner, Wolfgang Ohashi, F Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Monte Carlo Simulation and Measurement of Nanoscale N-Mosfets by Bufler, F.M Asahi, Yoshinori Fichtner, Wolfgang Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Scaling of Strained Si N Mosfets IntoBallistic Regime and Associated Anisotropic Effects by Bufler, F.M Fichtner, Wolfgang Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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