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Modeling Study of Ultrathin Gate Oxides Using Direct Tunneling Current and Capacitance Voltage Measurements in Mos Devices by
  • Yang, Nian
  • Henson, W. Kirklen
  • Wortman, Jimmie J
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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Estimation OfEffects of Remote Charge Scattering on Electron Mobility of N-Mosfet'S with Ultrathin Gate Oxides by
  • Yang, Nian
  • Henson, W. Kirklen
  • Wortman, Jimmie J
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Request article
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