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		Interface Trap Generation by Fn Injection Under Dynamic Oxide Field Stress by Chen, T.P Lo, K. F li, Stelia Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Post-Stress Trap Generation Induced by Oxide-Field Stress with Fn Injection by Chen, T.P li, Stelia Fung, S Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Gate Oxide Thickness Dependence of Edge Charge Trapping in Nmos Transistors Caused By Charge Injection Under Constant-Current Stress by Chen, T P Tse, M S Ang, C H Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Characterization of Interface Degradation in Deep Submicronmosfets By Gate Controlled -Diode Measurement by Huang, J.-T Chen, T.P Tse, M.S Source: Microelectronics Journal Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Reproducibility of Transmission Line Measurement of Bipolar I-V Characteristics of Mosfet'S. by Chen, T.P Chen, R Fung, S Source: Ieee Transactions on Instrumentation and Measurement Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Influence of Voltage Contacts on Precision Meaurements ofQuantized Hall Resistance: and Efect of Externally Injected Current. by Chua, H. A Chen, T. P Source: Ieee Transactions on Instrumentation and Measurement Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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