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Steady-State and Transient Foward Current Voltage Characteristics of 4h-Silicon Carbide 5.5 Kv Diodes at High and Superhigh Current Densities by
  • Palmour, John W
  • Rumyantsev, S.L
  • Dyakonova, Nina V
  • Ivanov, Pavel A
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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Low Frequency and 1/F Noise in Wide-Gap Semiconductors : Silicon Carbide and Gallium Nitride by
  • Levinshtein, M.E
  • Rumyantsev, S.L
Source: Iee Proceedings:Circuits, Devices and Systems
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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