Your search returned 2 results.

Sort
Unhighlight Highlight
Select all Clear all
Select titles to:
Results
A New I-V Model ConsideringImpact-Ionization Effect Initiated byDigbl Current for Intrinsic N-Channel Poly-Si Tft'S by
  • Chen, Hsin-li
  • Wu, Chen-Yang
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Request article
An Analytical Grain-Barrier Height Model and its Characterization for Intrinsic Poly-Si Thin-Film Transistor by
  • Chen, Hsin-li
  • Wu, Chung-Yuan
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Request article
Pages