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Characterization of Leakage Current in Thin Gate Oxide Subjected to 10 Kev X-Ray Irradiation by
  • ling, Chi-Hai
  • Ang, C H
  • Ang, D. S
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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Gate Oxide Thickness Dependence of Edge Charge Trapping in Nmos Transistors Caused By Charge Injection Under Constant-Current Stress by
  • Chen, T P
  • Tse, M S
  • Ang, C H
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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