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		Trading Off Programming Speed and Current Absorption in Flash Memories with Ramped Gate Programming Technique by Esseni, David Ricco, Bruno Tassan, S Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A New and Flexible Scheme for Hot-Electron Programming of Nonvolatile Memory Celis by Esseni, David Cappelietti, Paolo Ricco, Bruno Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Modeling of Electron Mobility Degradation By Remote Coulomb Scattering in Ultrathin Oxide Mosfets by Esseni, David Abramo, Antonio Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Methodology to ExtractChannel Current of Permeable Gate Oxide Mosfets by Palestri, Pierpaolo Esseni, David Selmi, Luca Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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