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		Effect of Physical Stress onDegradation of Thin Sio2 Films Under Electrical Stress by Yang, Tien-Chun SARaswat, Krishna C Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Rapid Thermal Anneal of Gate Oxides for Low Thermal Budget Tft'S by Bhat, Navakanta Wang, Albert W SARaswat, Krishna C Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Dependence of Fermi Level Positions at Gate and Substrate onReliability of Ultrathin Mos Gate Oxides by Yang, Tien-Chun Sachdev, Pinkesh SARaswat, Krishna C Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Optimization of Silicon-Germanium Tft'S ThroughControl of Amorphous Precurson Characteristics by SARaswat, Krishna C Subramanian, V Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		High-Performance Germanium-Seeded Lateraliy Crystalilzed Tft'S for Vertical Device Integration by Subramanian, V SARaswat, Krishna C Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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