Your search returned 8 results.

Sort
Results
Models of Boron Redistribution During Thermal Oxidation with General Oxidation Rate by
  • Suzuki, Kunihiro
  • Miyashita, Toshihiko
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Parasitic Capcitance of Submicrometer Mosfet'S by
  • Suzuki, Kunihiro
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Compact and Conprehensive Database for Ion-Implanted as Profile by
  • Suzuki, Kunihiro
  • Sudo, R
  • Feudel, Thomas
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
High Activity of B During Solid-Phase Epitaxy in A Pre-Amorphized Layer for med By Ge Ion Implantation and Deactivation During A Subsequent Thermal Process by
  • Suzuki, Kunihiro
  • Tashiro, H
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Multiple Ion Implantation Profile Using Differential Channel Dose by
  • Tashiro, Hiroko
  • Suzuki, Kunihiro
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
High Activation of Sb During Solid-Phase Epitaxy and Deactivation During Subsequent Thermal Process by
  • Suzuki, Kunihiro
  • Tashiro, Hiroko
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Short-Channel Single-Gate Soi Mosfet Model by
  • Suzuki, Kunihiro
  • Pidin, Sergey
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Diffusion Coefficient of B in Hfo2 by
  • Sugita, Yoshihiro
  • Tashiro, Hiroko
  • Suzuki, Kunihiro
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Pages