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		limitations of Conductance ToMeasurement OfInterface State Density of Mos Capacitoras with Tunneling Gate Gate Dielectrdics by Vogel, Eric M Henson, W. Kirklen Suehle, John S Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Modeling Study of Ultrathin Gate Oxides Using Direct Tunneling Current and Capacitance Voltage Measurements in Mos Devices by Yang, Nian Henson, W. Kirklen Wortman, Jimmie J Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Estimation OfEffects of Remote Charge Scattering on Electron Mobility of N-Mosfet'S with Ultrathin Gate Oxides by Yang, Nian Henson, W. Kirklen Wortman, Jimmie J Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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