Your search returned 5 results.

Results
		Hali Factors of Si Nmos Inversion Layers for Magfet Modeling by Jungemann, C Dudenbostel, D Meinerzhagen, B Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Investigation of Compact Models for Rf Noise in Sige Hbts By Hydrodynamic Device Simulation by Jungemann, C Neinhus, B Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Hierarchical 2-D Dd and Hd Noise Simulations of Si and Sige Devices-Part I: Theory by Jungemann, C Neinhus, B Meinerzhagen, B Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Hierarchical 2-D Dd and Hd Noise Simulations of Si and Sige Devices-Part Ii:Results by Jungemann, C Neinhus, B Decker, S Meinerzhagen, B Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		onApplicability of Nonsistent Monte Carlo Device Simulations by Jungemann, C Meinerzhagen, B Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

Refine your search