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Ultra-Thin Elevated Channel Poly-Sitft Technology for Fuliy-Integrated Amlcd System on Glass by
  • Zhang, Shengong
  • Sin, Johnny K O
  • li, J. N
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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A Viable Self-Aligned Bottom-Gate Mos Transistor Technology for Deep Submicron 3-D Sram by
  • Zhang, Shengong
  • Han, Ruqi
  • Huang, Ru
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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