Results of search for 'ccl=su:"Silicon Devices"' › Engr Abul Kalam Library catalog

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		Advanced Source/Drain Engineering for Box-Shaped Ultrashallow Junction for mation Using Laser Annealing and Pre-Amorphization Implantation in Sub-100-Nm Soi Cmos by Kim, S D Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Optimization of Characteristics Related toEmitter-Base Junction Self-Aligned Seg Sige Hbts and Their Application in 72-Ghz-Static/92-Ghz-Dynamic Frequency Dividers by Washio, K Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Oxynitridation Using Radical-Oxygen and -Nitrogen for High-Performance and Highly Reliable N/P Fets by togo, M Watanabe, K Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Plasma-Induced Micro Breakdown in Small-Area Mosfets by Cellere, Giorgio Larcher, L Valentini, M Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		off-Leakage and Drive Current Characteristics of Sub-100-Nm Soi Mosfets and Impact of Quantum Tunnel Current by Nakajima, H Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Impurity-Profile-Based Threshold-Voltage Model of Pocket-Implanted Mosfets for Circuit Simulation by Ueno, H Kitamaru, D Morikawa, M Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Technological Requirements for A Lateral Sige Hbt Technology Including Theroretical Performance Predictions Relative to Vertical Sige Hbts by Hamelin, J Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Advanced Model and Analysis of Series Resistance for Cmos Scaling Into Nanometer Regime Part-Theoretical Derivation by Kim, S D Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Advanced Model and Analysis of Series Resistance for Cmos Scaling Into Nanometer Regime Part- Ii: Quantitative Analysis by Kim, S D Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Characterization ofNovel Polysilicon Tft with A Subgate Coupling Structure by Chang, K M Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Inverse Modeling of Sub-100 Nm Mosfets Using I-V and C-V by Djomehri, I J Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Floating-Island Tft Leakage Caused By Proces Step Reduction by Tsujimura, T Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Improved Hot-Carrier Reliability of Silicon-on-Insulator Transistors By Deuterium Passivation of Defects At Oxide/Silicon Interfaces by Cheng, K. T Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Ambipolar Schottky-Barrier Tfts by Lin, H. C Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A 0-2-Um 180-Ghz-Fmax 6.7-Ps-Ecl Soi/Hrs Self-Aligned Seg Sige Hbt/Cmos Technology for Microwave and High-Speed Digital Applications by Washio, K Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		High-Speed Digital Applications by Shimamoto, H Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Design and Fabrication of 50-Nm Thin-Body P-Mosfets with A Sige Heterostructure Channel by Subramaniam, K. V Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Technology and Reliability Constrained Future Copper Interconnects-Part Ii: Performance Implications by Kapur, P K Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		An Anomalous Device Degradation of Soi Narrow Width Devices Caused By Sti Edge Influence by Park, J Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Constant Charge Erasing Scheme for Flash Memories by Chimenton, A Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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