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		Effects of Material Interfaces in Cu/Low-K Damascene Interconnects on Their Performance and Reliability by Tada, M Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Ultrathin Aluminum Oxide Gate Dielectric on N-Type 4h-Sic Prepared By Low Thermal Budget Nitric Acid Oxidation by Huang, S W Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Effects of Ti Addition on Via Reliability in Cu Dual Damascene Interconnects by Ueki, Masashi Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Polysilicon Tft Structures for Kink-Effect Suppression by Mariucci, L Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Optimization of Alloy Composition for High-Performance Strained-Si-Sige N-Channel Mosfets by Olsen, Sarah H Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Polysilicon Tft Structures for Kink-Effect Suppression by Mariucci, L Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Over-Erase Phenomenon in Sonos-Type Flash Memory and Its Minimization Using A Hanium Oxide Charge Storage Layer by Tan, Y N Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		onBallistic Transport in Nanometer-Scaled Dg Mosfets by Saint Martin, J Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Active Devices Under Cmos 1/O Pads by Chou, K. Y Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Direct-Tunneling Gate Leakage Current in Double-Gate and Ultrathin Body Mosfets by Chang, L Yang, K Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Fully-Depleted Soi Cmosfets withFully-Silicided Source/Drain Structure by Ichimori, T Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Analysis of Nonuni for m Esd Current Distribution in Deep Submicron Nmos Transtor by Oh, K. H Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Impact of Gate-to-Contact Spacing on Esd Performance of Salicided Deep Submicron Nmos Transistors by Oh, K. H Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Closed- for m Analytical Drain Current Model Considering Energy Transport and Self-Heating for Short-Channel Fully Depleted Soi/Nmos Devices with Lightly Doped Drain Structure Biased in Strong Inversion by Lin, S.C Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Oxide Roughness Effect on Tunneling Current of Mos Diodes by Hsu, B. C Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Analytical Subthreshold Surface Potential Model for Pocket N-Mosfets by Pang, Y. S Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Polycrystalline Silicon Thin-Film Transistors Fabricated By Defect Reduction Methods by Watakabe, H Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Multiple-Gate Soi Mosfets: Device Design Guidelines by Park, J Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Temperature Dependence of 1/F Noise in Polysilicon-Emitter Bipolar Transistors by Zhao, E Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Performance Enhancement of Strained-Si Mosfets Fabricated on A Chemical-Mechanical-Polished Sige Substrate by Sugii, N Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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Your search returned 115 results.