Results of search for 'ccl=su:"Semiconductor Devices"'

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		Turn-off Switching Analysis Considering Dynamic Avalanche Effect for Low Turn-off High-Voltage Igbts by Ogura, T Ninomiya, Hiroyuki Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Thermal Modeling and Measurement of Aigan-Gan Hfets Built on Sapphire and Sic Substrates by Park, J Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Numerical Analysis of Slow Current Transients and Power Compression in Gaas Fets by Kazami, Y Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Simulation and Properties of Transitions to Traveling-Wave Deflection Systems by Staras, S Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Use of Wnx AsDiffusion Barrier for Interconnect Copper Metallization of Ingap-Gaap-Gaas Hbts by Chang, S W Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Analytic Model of 1-V Characteristics of 4h-Sic Mesfets Based on Multiparameter Mobility Model by Lv, H Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Experimental Investigation ofTemperature Dependence of Inas-Aisb-Gasb Resonant Interband Tunnel Diodes by Xu, Y Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Performance Evaluation of A Schottky Sic Power Diode in A Boost Pfc Application by Spiazzi, G Source: Ieee Transactions on PowerElectronics Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		High Turn-off Current Capability of Parallel-Connected 4.5 Kv Trench Iegt by Ogura, Tsuneo Matsuda, Hideo Inoue, tomoki Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Novel Temperature-Dependent Large-Signal Model of Heterojunction Bipolar Transistor with A Unified Approach for Self-Heating and Ambient Temperature Effects by Park, H.M Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		on-State Analytical Modeling of Igbts with Local Lifetime Control by Yuan, X Source: Ieee Transactions on PowerElectronics Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Growth of Ultrahigh Carbon -Doped Ingaas and Its Application to Inp/Ingaas(C) Hbts by Han, J. C Song, J Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Novel Soi P-Channel Mosfets with Higher Strain in Si Channel Using Double Sige Heterostructures by Mizuno, T Sugiyama, N Tezuka, A Takagi, S.-I Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Avalanche Phenomena in 4h-Sic P-N Diodes Fabricated By Aluminum Or Boron Implantation by Negoro, Y Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Requirements for Low Intermodulation Distortion in Gan-Alx Ga1-Zn High Electron Mobility Transistors: A Model Assessment by Li, T Joshi, R. R Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Anonquasi-Static Table-Based Small-Signal Model of Heterojunciton Bipolar Transistor by Ko, S Koh, K Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Improved Temperature-Dependent Performances of A Novel Ingap-Ingaas-Gaas Double Channel Pseudomorphic High Electro Mobility Transistor (Dc-Phemt) by Yu, K.H Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		30-Nm Two-Step Recess Gate Inp-Based Inalas/Ingaas Hemts by Suemitsu, T Yokoyama, Y Ishii, T Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Equivalent Circuit Model for A Thz Detector Based onDouble-Electron Layer Tunneling Transistor (Deltt) by Khodier, M. M Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Modeling ofResistive Losses Due toBus-Bar and External Connecitons in Iii-V High-Concentrator Solar Cells by Rey-Stolle, I Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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Your search returned 73 results.