Results of search for 'ccl=su:"Silicon Devices"' › Engr Abul Kalam Library catalog

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		Detailed Investigation of Geometrical Factor for Pseudo-Mos Transistor Technique by Komiya, Kazuhito Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Metal Gate Work Function Engineering on Gate Leakage of Mosfets by Hou, Y.-T Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A 90-Nm Logic Technology Featuring Strained-Silicon by Thompson, S E Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Simple Approach to Fabrication of High-Quality Hfsion Gate Dielectrics with Improved Nmosfet Performances by Wang, X Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Poly-Silicon Tft with A Sub-5-Nm Thick Channel for Low-Power Gain Cell Memory in Mobile Applications by Ishii, T Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Nvm Characteristics of Single-Mosfet Cells Using Nitride Spacers with Gate-to-Drain Noi by Hsieh, S.-C Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Silicon Heterojunction Solar Cell: A New Buffer Layer Concept with Low-Temperature Epitaxial Silicon by Centurioni, E Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		onHigh-Temperature (to 300 Oc) Characteristics of Sige Hbts by Chen, T Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Stable Threshold Voltage Extraction Using Tikhonov'S Regularization Theory by Choi, W Y Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Nonvolatile Flash Memory Device Using Ge Nanocrystals Embedded in Hfaio High-K Tunneling and Control Oxides: Device Fabrication and Electrical Performance by Chen, J. H Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Analysis and Optimization of Sdoi Structure to MaximizeIntrinsic Performance of Extremely Scaled Mosfets by Zhang, Z Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Low-Cost Fully Self-Aligned Sige Bicmos Technology Using Selective Epitaxy and A Lateral Quasi-Single-Poly Integration Concept by Tilke, A T Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A New Trench Bipolar Transistor for Rf Applications by Hueting, Raymond J.E Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Thin-Film Strained-Soi Cmos Devices-Physical Mechanisms for Reduction of Carrier Mobility by Sugiyama, N Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Device Design Methology for Sub-100-Nm Soc Applications Using Bulk and Soi Mosfets by Suryagandh, S S Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Feature-Scale Process Simulation and Accurate Capacitance Extraction for Backend of A 100-Nm Aluminum/Teos Process by Heitzinger, Clemens Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Impact Ionization Mos (I-Mos) Part Ii: Experimental Results by Gopalakrishnan, K Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Investigation ofSource/Drain Asymmetric Effects Due to Gate Misalignment in Planar Doubl-Gate Mosfets by Yin, C Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Optimization ofNonverlap Length in Decanano Mos Devices with 2-D Qm Simulations by Gusmeroli, R Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		onConduction Mechanism in Polycrystalling Silicon Thin-Film Transistors by Walker, A. J Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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