Results of search for 'ccl=su:"Semiconductor Devices"'

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		Double-Island Single-Electron Devices a Useful Unit Device for Single-Electron Logic Asi'S by Fujiwara, Akira Takahashi, Yasuo Murase, Kazuo Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Bulk Defect Induced Low-Frequency Noise in N P Silicon Diodes by Hou, Fan-Chi Simoen, Eddy Claeys, C Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Opticaliy Induced Sidegating Current Isolation of Faas Mesfet by Multiquantum Barrier by Lee, Ching Ting Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Negative Capacitance Effect in Semiconductor Devices by Ershov, Maxim Buchanan, M Jonscher, andrew K Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Model for Drain Current of Deep Submicrometer Mosfet'S Including Electron-Velocity Overshoot by Roldan, J B Gamiz, F Carcelier, J. E Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Compact Double-Gate Mosfet Model Comprising Quantum-Mecanical and Nonstatic Effects by Baccarani, G Reggiani, S Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Recent Advaces in Process Synthesis for Semiconductor Devices by Hosack, Harold H Mozumder, Purnendu K Poliack, Gordon P Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Characteristics OfBase Coupled Insulated Gate Thyristor Experiment and Analytical Modeling by Ajit, J. S Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Mos-Controlied High-Voltage Thyristor with Low Swithin Losses by Hermansson, Wiliy andersson, Karin Sigurd, Dag Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Multimechanism Model for Photon Generation by Silicon Junctions in Avalanche Breakdown by Akil, Nader Kerns, Sherra E Kerns, David V Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Enhanced Transmission line Model Structures for Accurate Resistance Evaluation of Smali-Size Contacts and for More Reliable Fabrication by Sawdai, Donald Pavlidis, Dimitris Cui, Delong Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Depletion- and Enhancement-Mode Modulation-Doped Field-Effect Transistors for Ultrahigh-Speed Applications an Electrochemicali Fabrication Technology by Xu, Dong Suemitsu, T Tamamura, Toshiaki Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Single-Mode Fiber Packaging for Semiconductor Optical Devices by Mann, James W Reith, Leslie A Source: IEEE Transactions on Components Hybrids and Manufacturing Technology Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Transient Thermal Study of Semiconductor Devices\ by Lee, Chin C Palisoc, Arthur L Min, Y. Jay Source: IEEE Transactions on Components Hybrids and Manufacturing Technology Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Bcb-Bridged Distributed Wideband Spst Switch Using 0.25 Um in 0.5 As Metamorphic Hemts by Lin, K. C Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		High-Voltage Normally off Gan Mosfets on Sapphire Substrates by Matocha, K Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		ModelingElectrical Characteristics of Schottky Contacts in Low-Dimensional Heterostructure Devices by Ragi, Regiane Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Modeling and Analysis of Znse-Ge Hbts by Abdel-Motaleb, I M Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Hydrogen Sensitivity of Inp Hemts with Wsin-Based Gate Stack by Mertens, Sander Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Velocity Overshoot Effects and Scaling Issues in Iii-V Nitrides by Singh, M Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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Your search returned 73 results.