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		Macroscopie Simulation of Quantum Mechanical Effects in Two-Dimensional Mos Devices ViaDensity Gradient Method by Connelly, D Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Silicon Single-Electron Transistors with Sidewall Depletion Gates and Their Application to Dynamic Single-Electron Transistor Logic by Kim, D Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Hot Carrier-Induced Degration of Gate Overlapped Lightly Doped Drain (Goldd) Polysilicon Tfts by Valletta, A Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		The Design, Characterization, and Modeling of Rf Ldmosfets on Silicon-on-Insulator Material by Mcshane, E Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Analytical Modeling of Quantization and Volume Inversion in Thin-Si-Film Dg Mosfets by Ge, L Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Ultralow Resistance W/Poly-Si Gate Coms Technology Using Amorphous-Sitin Buffer Layer by Wakabayashi, H Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A New Compact Dc Model of Floating Gate Memory Cells without Capacitive Coupling Coefficients by Larcher, L Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Threshold Voltage Roll-Up/Roll-off Characteristic Control in Sub-0.2-Um Single Workfunction Gate Cmos for High-Performance Dram Applications by Inaba, S Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		High-Frequency Small Signal Ac and Noise Modeling of Mosfets for Rf Ic Design by Cheng, Y Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Effect of for ward and Reverse Substrate Biasing on Low-Frequency Noise in Silicon Pmosfets by Deen, M.J Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Analysis on High-Frequency Characteristics of Soi Lateral Bjts with Self-Aligned External Base for 2-Ghz Rf Application by Nii, H Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Dynamic Threshold Voltage Damascene Metal Gate Mosfet (Dt-Dmg-Mos) Technology for Very Low Voltage Operation of Under 0.7 V by Yagishita, A Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		The Effects of Geometrical Scaling onFrequency Response and Noise Performance of Sige Hbts by Zhang, S Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Spacer Patterning Technology for Nanoscale Cmos by Choi, Y. -K Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		onSio2-Based Gate-Dielectric Scaling Limit for Low-Standby Power Applications InContext of A 0.13 Um Cmos Logic Technology by Huang, T. H Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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