Choi, Kyu-Jeong <br/><br/>
Ultrathin Hfo2 Gate Dielectric Grown By Plasma-Enhanced Chemical Vapor Deposition Using Hf[Oc(Ch3)3]4 As A Precursor InAbsence of O2 

 - 60-65 p. 
<br/><br/><label>Subjects--Topical Terms: </label><br/>Dielectric<br/>Plasma<br/>Chemical Vapor Deposition (Cvd)