Chung, Gilyong Feldman, C Cooper, James A <br/><br/>
Effect of Process Variations and Ambient Temperature on Electron Mobility AtSio2/4h-Sic Interface 

 - 1582-1588 p. 
<br/><br/><label>Subjects--Topical Terms: </label><br/>Mosfet<br/>Mobility<br/>Silicon Carbide