Ogura, T Ninomiya, Hideaki <br/><br/>
4.5-Kv Injection-Enhanced Gate Transistors (Iegts) with High Turn-off Ruggedness 

 - 636-641 p. 
<br/><br/><label>Subjects--Topical Terms: </label><br/>Insulated Gate Bipolar Transistors (Igbts)<br/>Power Semiconductor Switches