Lai, P. T. Xu, J.P. Cheng, Y.C. <br/><br/>
Interface Properties of No-Annealed N2o-Grown Oxynitride 

 - 2311-2314 p. 
<br/><br/><label>Subjects--Topical Terms: </label><br/>Gate Dielectrics<br/>Hot-Carrier<br/>Mos Device