Yang, Nian Henson, W. Kirklen Wortman, Jimmie J. <br/><br/>
Modeling Study of Ultrathin Gate Oxides Using Direct Tunneling Current and Capacitance Voltage Measurements in Mos Devices 

 - 1464-1471 p. 
<br/><br/><label>Subjects--Topical Terms: </label><br/>Capacitance<br/>Dielectric Films<br/>Inversion Layers