Investigation of Inas/Gaas Quantum-Dot Infrared Photodetector with in 0.5 Ga 0.5 P Dark Current Blocking Layer

By: Material type: ArticleArticleDescription: 1374-1375 pSubject(s): In: IET:IEE: Electronics Letters
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Articles Articles Periodical Section Vol.38, No.22 (Oct. 2002) Available