Reliable Non-Zn-Diffused Inp/Ingaas Avalanche Photodiode with Buried N-Inp Layer Operated By Electron Injection Mode

By: Material type: ArticleArticleDescription: 1378-1379 pSubject(s): In: IET:IEE: Electronics Letters
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Item type Current library Call number Vol info Status Date due Barcode
Articles Articles Periodical Section Vol.40, No.21 (Oct. 2004) Available

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