4.5-Kv Injection-Enhanced Gate Transistors (Iegts) with High Turn-off Ruggedness

By: Material type: ArticleArticleDescription: 636-641 pSubject(s): In: Ieee Transactions on Electron Devices
Holdings
Item type Current library Call number Vol info Status Date due Barcode
Articles Articles Periodical Section Vol.51, No.04 (Apr. 2004) Available