A Self-Aligned Process for High-Voltage, Short-Channel Vertical Dmosfets in 4h-Sic

By: Material type: ArticleArticleDescription: 1721-1725 pSubject(s): In: Ieee Transactions on Electron Devices
Holdings
Item type Current library Call number Vol info Status Date due Barcode
Articles Articles Periodical Section Vol.51, No.10 (Oct. 2004) Available