Direct Lateral Profiling of Hot-Carrier-Induced Oxide Charge and Interface Traps in Thin Gate Mosfet'S

By: Material type: ArticleArticleDescription: 512-520 pSubject(s): In: IEEE Transactions on Electron Devices
Holdings
Item type Current library Call number Vol info Status Date due Barcode
Articles Articles Periodical Section Vol.45, No.02 (Feb. 1998) Available